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This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design.
- Subject:
- Career and Technical Education
- Electronic Technology
- Physical Science
- Physics
- Material Type:
- Activity/Lab
- Lecture Notes
- Provider:
- Delft University of Technology
- Provider Set:
- TU Delft OpenCourseWare
- Author:
- R.A.C.M.M. van Swaaij
- Date Added:
- 02/20/2016